Japanese

Read about R&D activities at NTT Laboratories by clicking on the following links to this year's R&D Annual Report.


Basic Research Exploring the Future

Basic Research Exploring the Future

recommend-mark : recommended exhibits

  • E-1
  • Demonstration of precise and high-speed single-electron manipulation
  • pdf
  • Ultimate electronics using single-electron control in silicon nanodevices
  • We have been studying precise control of electrons one by one using nanometer scale silicon transistors to develop devices with new functionality. We have demonstrated high-speed and high-accuracy operation of a single-electron transfer device, which periodically conveys a single electron. In addition, by detecting the number of electrons using a high-resolution charge sensor, we have demonstrated feedback control based on the single-electron detection.
  • E-2
  • At how large a scale can we apply quantum mechanics?
  • pdf
  • Realism breaking of macroscopic current with superconducting devices
  • The idea that an observed object exists even before it is observed is called “realism.” Realism should be satisfied in our living world, but is known to be broken in the microscopic world described by quantum mechanics. In this investigation, we confirmed the breaking of macroscopic realism for electrical currents composed of a huge number of electrons in a superconducting circuit.
  • recommend-markE-3
  • A quantum neural network for solving complex optimization problems
  • pdf
  • A new-concept computer based on a physical system
  • We have realized a quantum neural network (QNN), which finds solutions to combinatorial optimization problems by simulating interacting spins using a networked optical parametric oscillators (OPO) used as artificial spins. Our QNN found solutions to maximum cut problems consisted of 2000 nodes with less than a ten-thousandth of a second.
  • E-4
  • Two-dimensional layered materials for next-generation devices
  • pdf
  • Graphene & transition metal dichalcogenides
  • We have investigated high-quality crystal growth of 2D materials such as graphene and transition metal dichalcogenides(TMDCs) on a large-area substrate using various methods. Using heterostructures of 2D layered materials with sub-nanometer thickness control, we are exploring novel physical properties and developing next-generation devices.
  • E-5
  • Power reduction in datacenters and ICT devices
  • pdf
  • Ultra-low-power-consumption photonic integrated circuit based on Si platform
  • The use of optical links for short-range communication means that it is essential to develop technologies that reduce power consumption and cost. NTT R&D is developing techniques for direct bonding and epitaxial growth of InP-based membranes on Si substrates to achieve heterogeneous integration and photonics-electronics convergence. A directly modulated and ultra-low-power-driven single-mode laser is demonstrated on a Si platform.
  • E-6
  • Innovative power supply infrastructures leading us to highly energy-efficient society
  • pdf
  • Energy-saving small-sized power-supply modules consisting of GaN-based power transistors
  • Excellent characteristics of Gallium-Nitride(GaN)-based semiconductor power devices are promising essential elements of energy-efficient and environmentally friendly future society. NTT is collaborating with Shindengen Electric Manufacturing Co., Ltd., Chiba University, and Panasonic Semiconductor Solutions Co., Ltd. for their popularization.
  • E-7
  • NTT collaborates with partners to advance our ultra-high-speed IC technologies
  • pdf
  • Compound semiconductor IC technology applicable to ultra-high-speed services and systems
  • Compound semiconductor (InP) integrated circuits (ICs) are promising for their higher-speed operation and higher output power than Si-based ICs and are therefore expected to compensate for the inferior characteristics of Si-based ICs. NTT discloses process design kits (PDKs) for our state-of-the-art compound semiconductor processes to collaboration partners in order to advance our process technologies.