Top > Introduction to Activities > Awards
2000
- Okochi Memorial Technology Award
- Masao Kawachi, Motohiro Nakahara, Tadashi Miyahara, Tetsuo Miya, Toshinori Nozawa
Development of Quartz Planar Lightwave Circuit - Information Processing Society of Japan, Fellow
- Kouichi Matsuda
Systematization of Basic Software and Promotion of Online Systems - Nissan Science Foundation, the 7th Nissan Technology Award
- Hideaki Takayanagi
Study on Quantum Effects in a Superconductor and Semiconductor Coupling Structure - Institute of Electrical Engineers, Paper Award
- Eiji Higurashi
Angular alignment of micro-devices using optical angular momentum - Director of Science and Technology Agency Award, Science and Technology Merits Award for Year 2000
- Tadao Nagatsuma
Study on Photonic Measurement Technology for High-speed Electronics - Director of Science and Technology Agency Award, Optical Signal Transmitter Award for Year 2000
- Katsushi Iwashita, Kouichi Sudou, Nori Shibata, Kouji Kikushima, Hiroshi Nakamoto
Optical Signal Transmitter - IEEE/LEOS Quantum Electronics Award
- Yoshihisa Yamamoto
Invention and first demonstration of the technique for producing amplitude squeezed light semiconductor - Institute of Electronics, Information and Communication Engineers, Paper Award, the Sixth Inose Award for Year 1999
- Yasuhiro Andou, Mitsuo Usui, Nobuo Satou, Kousuke Katsura
Multiport Optical Bare-Fiber Connector for Parallel Optical Interconnect Module - Institute of Electronics, Information and Communication Engineers Paper Award
- Naonori Ueda,Ryouhei Nakano
EM Algorithm with Merging and Splitting Operations for a Hybrid Model - National Invention Recognition, Minister of International Trade and Industry Award
- Hiroshi Takahashi, Isao Nishi, Kuniharu Kato
Invention of optical integrated circuit for separating light signals in high-density wavelength division multiplexing transmission systems - Japan Society of Applied Physics, Promotion Award
- Kazuhide Kumakura, Toshiki Makimoto, Naoki Kobayashi
Development of high-Hall density Mg-doped InGaN/GaN superlattice - Japan Society of Applied Physics, Paper Award
- Hiroyuki Kageshima, Kenji Shiraishi, Shinji Uematsu
Universal Theory of Si Oxidation Rate and Importance of Interfacial Si Emission - Institute of Electronics, Information and Communication Engineers, Electronics Letter Paper Award
- Satoshi Oku, Osamu Hanaizumi, Yasuki Sakurai, Yoshimi Aizawa, Shoujiro Kawakami, Eiichi Kuramochi
Embedding III-V family compound semiconductor active layer into a 3-dimensional photonic crystal - European Microwave Conference EuMC 2000 Microwave Prize
- Hideki Kamitsuna, Naoteru Shigekawa, Yutaka Matsuoka, Shouji Yamahata
A 82-GHz-optical-gain-cutoff-frequency InP/InGaAs double-heterostructure phototransistor (DHPT) and its application to a 40-GHz-band OEMMIC photoreceiver - Matsuo Science Promotion Foundation, Matsuo Science Award
- Yoshihisa Yamamoto
Basic study on light quantum physics - The 28th Electric Science Technology Promotion Award (Ohm Technology Award)
- Etsuo Noguchi
Research and Development of the Technology for Growing High-performance Semiconductor Laser Crystals for Optical Communication



