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History

1948-1975

1948

  • · [ Inauguration of Electrical Communications Laboratories ]

1950

  • · Fabrication of a Prototype Germanium Point-contact Transistors

1952

  • · [ Establishment of Nippon Telegraph and Telephone Public Corporation ]

1953

  • · Fabrication of a Germanium Junction Transistors
Fabrication of a Germanium Junction Transistors

1955

  • · [ Start of Semiconductor Section ]

1958

  • · Alloy-type High speed Germanium Transistor (fa=130MHz)
Germanium Transister

1960

  • · [ Establishment of Electrical Communications Laboratories,Ibaraki Branch ]
Ibaraki Branch

1963

  • · Fabrication of a Silicon Mesa-transistor(fa>600MHz)

1965

  • · Start of Research on Logical Integrated Circuits
  • · Start of research on Gallium Arsenide Semiconductors
  • · Practical use of Boundary Layer Magnetic Condensers (BL Condensers)
BL Condensers

1966

  • · [ Establishment of Basic Research Laboratory ]

1968

  • · Invention of Non-Threshold Logic Circuit (NTL)
NTL

1971

  • · [ Establishment of Integrated Circuit Research Laboratory ]
  • · [ Establishment of Research and Development Administrative Center ]
  • · [ Establishment of Ibaraki Electrical Communications Research Laboratories ]

1973

  • · Invention of Stepped Electrode Transistor (SET)
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