1948-1975

1948	[ Inauguration of Electrical Communications Laboratories ]
1950	Fabrication of a Prototype Germanium Point-contact Transistors
1952	[ Establishment of Nippon Telegraph and Telephone Public Corporation ]
1953	Fabrication of a Germanium Junction Transistors
1955	[ Start of Semiconductor Section ]
1958	Alloy-type High speed Germanium Transistor (fa=130MHz)
1960	[ Establishment of Electrical Communications Laboratories, Ibaraki Branch ]
1963	Fabrication of a Silicon Mesa-transistor(fa>600MHz)
1965	Start of Research on Logical Integrated Circuits Start of research on Gallium Arsenide Semiconductors Practical use of Boundary Layer Magnetic Condensers (BL Condensers)
1966	[ Establishment of Basic Research Laboratory ]
1968	Invention of Non-Threshold Logic Circuit (NTL)
1971	[ Establishment of Integrated Circuit Research Laboratory ] [ Establishment of Research and Development Administrative Center ] [ Establishment of Ibaraki Electrical Communications Research Laboratories ]
1973	Invention of Stepped Electrode Transistor (SET)