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History/Achievement

 
 

1976-1988

1976
  • [ Establishment of Large Scale Integrated Memory Division ]
  • Corroboration of Long Wave Length Band Optical
1977
  • Fabrication of a 64 kbit Memory (DRAM)
  • Fabrication of Optical Fiber by Vapor-phase Axial Deposition
    DRAM
1978
  • Invention of SIMOX Technology
1979
  • Development of a Single-chip LSI for PARCOR Speech Synthesis
  • Fabrication of a 256 kbit Memory (DRAM)
  • Development of 0.2 dB/km very low loss Optical Fiber
    Single-chip LSI for PARCOR Speech Synthesis
1980
  • Development of Super-High-Purity Optical Fiber
  • Invention of Master Key Method of Public Key Cryptosystem
  • Sustained Room Temperature Operation of 1.55 µm Semiconductor Laser
    Super-High-Purity Optical Fiber
    Semiconductor Laser
1981
  • Fabrication of CMOS 32 Bit VLSI Processor
    * Sustained Room Temperature Operation of DFB Laser
1982
  • [ Establishment of Functional Device Research Department ]
  • Measurement of Soliton transmission on Joseffson transmission line
  • Fabrication of 1 Mbit Memory (DRAM)
  • Fabrication of Gallium Arsenide 1Kbit LSI Memory
    Gallium Arsenide 1Kbit LSI Memory
1983
  • [ Establishment of Atsugi Electrical Communications Laboratories ]
    Atsugi Electrical Communications Laboratories
1984
  • [ Establishment of Information Communications and Materials science basic Research Department ]
  • Achievement of a dislocation-free 2inch Gallium Arsenide Crystal
1985
  • [ Privatization, the Birth of Nippon Telegraph and Telephone Corporation ]
  • [ Establishment of Basic Research Laboratories ]
  • Invention of Migration Enhanced Epitaxy (MEE)
    the Birth of Nippon Telegraph and Telephone Corporation
    MEE
1986
  • Development of High-Speed Fabrication of Single-mode Optical Fiber using the Full VAD Synthesis Process
  • Invention of Phonocode Speech Encoding Method
  • Development of Travelling Wave Semiconductor Optical Amplifier
  • Invention of 1.5µm band Zero Dispersion Fiber
  • Development of Planar Light Wave Circuit (PLC) Design and Fabrication Technology
  • Development of DS Type Optical Connectors
    PLC
1987
  • [ Establishment of LSI Laboratories, and Opto-electronics Laboratories ]
  • Development of Ballistic Carrier Transistor (BCT)
  • Fabrication of 16 Mbit Level DRAM TEST Devices
  • Fabrication of Oxide Superconductor Thin Films
  • Generation of Amplitude Squeezed Light in Semiconductor Lasers
  • Successful control of Neurite Growth Orientation
  • Successful Emission of SOR Light
    SOR Light
1988
  • Development of High Speed LSI Probing Technology (EOS)
  • Fabrication of Narrow Spectrum Line Width Multi-electrode DFB Laser
  • Practical Use of SC Type Optical Connectors
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